- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36699 > APT1001R6SFLLG (MICROSEMI POWER PRODUCTS GROUP) 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT1001R6SFLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 153K |
| 代理商： | APT1001R6SFLLG |
APT1001R6BFLL_SFLL
050-7126
Rev
A
4-2004
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
1000
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
0.3
0.5
0.7
0.9
1.1
1.3
1.5
33
10
5
1
.5
.1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=500V
VDS=200V
VDS=800V
I
D = 8A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
5,000
1,000
100
10
200
100
10
1
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
4
6
8
10
12
14
4
6
8
10
12
14
4
6
8
10
12
14
0
5
10 15 2025 3035 40 45 50
V
DD = 667V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
40
35
30
25
20
15
10
5
0
800
600
400
200
0
V
DD = 667V
I
D = 8A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
40
35
30
25
20
15
10
5
0
500
400
300
200
100
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1001R6SFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R6SFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R6BFLL | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001R6BN-BUTT | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901R6BN-GULLWING | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1001RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 |
| APT1001RBLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT1001RBN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1001RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD |
| APT1001RBVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。