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參數(shù)資料
| 型號(hào)： | APT1001RSVR |
| 廠商： | Advanced Power Technology Ltd. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | APT1001RSVR |
ADVINFORMATION
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
1000
11
1.00
25
250
±100
5
3
APT1001R
1000
11
44
±30
±40
280
2.24
-55 to 150
300
26
30
1210
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
POWER MOS VI
TM
TO-247
Power MOS VI
TM
is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
iss
and C
rss
.
Lower gate charge coupled with Power MOS VI
TM
optimized gate layout,
delivers exceptionally fast switching speeds.
Identical Specifications: TO-247 or Surface Mount D
3
PAK Package
Lower Gate Charge & Capacitance
100% Avalanche Tested
Easier To Drive
Faster switching
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 5792 1515
FAX: (33)5 5647 9761
D
3
PAK
BLC
SLC
APT1001RBLC
APT1001RSLC
1000V 11A 1.000
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