參數(shù)資料
型號(hào)： APT10026L2FLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi)： JFETs
英文描述： 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-264MAX, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 104K
代理商： APT10026L2FLL
DYNAMIC CHARACTERISTICS
050-7112
Rev
A
12-2003
APT10026L2FLL
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -38A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -38A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -38A, di/dt = 100A/s)
Peak Recovery Current
(IS = -38A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
38
152
1.3
18
Tj = 25°C
310
Tj = 125°C
625
Tj = 25°C
2.0
Tj = 125°C
6.0
Tj = 25°C
15
Tj = 125°C
2.6
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 4.43mH, RG = 25, Peak IL = 38A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-30A di/dt ≤ 700A/s V
R ≤
1000
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 500V
I
D
= 38A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 500V
I
D
= 38A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 667V, V
GS
= 15V
I
D
= 38A, R
G
= 3
INDUCTIVE SWITCHING @ 125°C
V
DD
= 667V V
GS
= 15V
I
D
= 38A, R
G
= 3
MIN
TYP
MAX
7114
1268
224
267
34
173
17
8
39
9
1196
713
2014
971
UNIT
pF
nC
ns
J
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參數(shù)描述
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