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參數(shù)資料
| 型號(hào)： | APT1002RCN |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | TO-254AA, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 133K |
| 代理商： | APT1002RCN |
DYNAMIC CHARACTERISTICS
APT1002RCN
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID [Cont.] @ 25°C
V
GS = 10V
V
DD = 0.5 VDSS
I
D = ID [Cont.] @ 25°C
R
G = 1.8
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
MIN
TYP
MAX
15
22
1530
1800
230
325
80
120
66
105
6.2
9.5
36
54
14
28
13
26
53
79
17
34
UNIT
pF
nC
ns
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (I
S = -ID [Cont.], dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -ID [Cont.], dlS/dt = 100A/s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
5.5
22
1.3
450
900
2.5
5
UNIT
W/°C
MIN
TYP
MAX
0.80
50
THERMAL CHARACTERISTICS
050-0015
Rev
B
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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