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參數資料
| 型號： | APT10035LLL |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 5/5頁 |
| 文件大?。?/td> | 92K |
| 代理商： | APT10035LLL |
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
APT10035B2LL - LLL
050-7010
Rev
C
3-2003
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT15DF120B
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
90%
t
d(off)
90%
10%
0
t
f
T
J
= 125 C
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
10 %
t
d(on)
90%
5 %
t
r
10 %
5 %
Gate Voltage
T
J
= 125 C
Drain Current
Drain Voltage
相關PDF資料 |
PDF描述 |
|---|---|
| APT10035B2LL | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10035B2LL | 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1003RSLLG | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1003RSLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1003RBLL | 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT10035LLLG | 功能描述:MOSFET N-CH 1000V 28A TO-264 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1003R5AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-3 |
| APT1003R5BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.5A I(D) | TO-247AD |
| APT1003R5CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-254AA |
| APT1003R5DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.5A I(D) | CHIP |
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