參數(shù)資料
型號(hào): APT10035LLLG
廠(chǎng)商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): JFETs
英文描述: 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 92K
代理商: APT10035LLLG
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
2
4
6
8
10
0
10
20
30
40
50
60
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
80
70
60
50
40
30
20
10
0
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5.5V
6V
6.5V
7V
5V
VGS =15,10 & 8V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
050-7010
Rev
C
3-2003
APT10035B2LL - LLL
Typical Performance Curves
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.0271
0.0656
0.0859
0.00899F
0.0202F
0.293F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
NORMALIZED TO
V
GS
= 10V @ 14A
I
D
= 14A
V
GS
= 10V
相關(guān)PDF資料
PDF描述
APT10035LLL 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
APT10035B2LL 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10035B2LL 28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
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