參數(shù)資料
型號(hào)： APT1003RKLL
廠商： Advanced Power Technology Ltd.
英文描述： POWER MOS 7 MOSFET
中文描述： MOSFET的功率MOS 7
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 95K
代理商： APT1003RKLL
APT1003RKLL
0
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 4A
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
25
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
V
G
,
I
D
,
I
D
,
C
1
10
100
1000
0
10
20
30
40
50
0
5
10
15
20
25
30
35 40
45 50
0.3
0.5
0.7
0.9
1.1
1.3
1.5
16
10
5
1
.5
.1
12
8
4
0
TC =+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100μS
I
(A)
I
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
140
I
D
(A)
R
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
FIGURE 16, SWITCHING ENERGY vs CURRENT
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100μH
E
on
E
off
t
r
t
f
S
μ
J
t
d
d
μ
J
t
r
f
(
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 667V
I
D
= 4A
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
VDS= 500V
VDS= 200V
VDS= 800V
t
d(on)
t
d(off)
E
on
E
off
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100μH
V
DD
= 667V
R
G
= 5
T
J
= 125°C
L = 100μH
E
ON
includes
diode reverse recovery.
4,000
1,000
100
10
10
1
OPERATION HERE
LIMITED BY R
DS
(ON)
60
50
40
30
20
10
0
120
100
80
60
40
20
0
相關(guān)PDF資料
PDF描述
APT1003RBLL POWER MOS 7 MOSFET
APT1003RSLL POWER MOS 7 MOSFET
APT10040B2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10040LVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
APT10040LVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT1003RKLLG 功能描述:MOSFET N-CH 1000V 4A TO-220 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT1003RSFLL 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT1003RSFLLG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR
APT1003RSFLLG /TR 制造商:Microsemi Corporation 功能描述:HIGH VOLTAGE, N-CHANNEL ENHANCEMENT MODE POWER MOSFET - Tape and Reel
APT1003RSLL 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
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