- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48367 > APT1004R2KN 3.5 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | APT1004R2KN |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | APT1004R2KN |
GS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (
°C)
J
T , JUNCTION TEMPERATURE (
°C)
J
C
T , CASE TEMPERATURE (
°C)
T , CASE TEMPERATURE (
°C)
C
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
D
I , DRAIN CURRENT (AMPERES)
I
,
DRAIN
CURRENT
(AMPERES)
D
I
,
DRAIN
CURRENT
(AMPERES)
D
I
,
DRAIN
CURRENT
(AMPERES)
D
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
DS
FIGURE 5, R
(ON) vs DRAIN CURRENT
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
V
(TH),
THRESHOLD
VOLTAGE
(VOLTS)
GS
I
,
DRAIN
CURRENT
(AMPERES)
D
R
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
DS
(NORMALIZED)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
R
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
DS
(NORMALIZED)
BV
,
DRAIN-TO-SOURCE
BREAKDOWN
DSS
VOLTAGE
(NORMALIZED)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
DS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
(NORMALIZED)
T
J
= 25
°C
2
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
0
4
8
12
16
20
DS
D
DS
V
> I (ON) x R
(ON)MAX.
230
SEC. PULSE TEST
2
3
0.0
1.5
0.5
0.0
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
0
2
4
6
8
10
12
1.0
2.0
2.5
5
4
2
1
0
100
200
300
400
500
3
2
4
5
V
GS
=10V
6V
5.5V
5V
4.5V
4V
V
GS
=5.5V,6V &10V
5V
4.5V
4V
1
0
6
8
10
T
J
= +25
°C
T
J
= +125
°C
T
J
= -55
°C
T
J
= +125
°C
T
J
= +25
°C
T
J
= -55
°C
0
4
3
2
1
0
25
50
75
100
125
150
2.5
2.0
1.5
1.0
0.5
0.4
0.8
0.6
1.4
1.2
1.0
0.7
0.8
0.9
1.0
1.1
1.2
V
GS
=10V
V
GS
=20V
APT1004RKN
APT1004R2KN
050-0036
Rev
C
APT1004R/1004R2KN
相關PDF資料 |
PDF描述 |
|---|---|
| APT100GF60JR | 100 A, 600 V, N-CHANNEL IGBT |
| APT100GT120JU2 | 140 A, 1200 V, N-CHANNEL IGBT |
| APT10M07JVFR | 225 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M11JVR | 144 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT11N80GC3 | 7.4 A, 800 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3 |
| APT1004RBN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD |
| APT1004RCN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
發(fā)布緊急采購，3分鐘左右您將得到回復。