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參數(shù)資料
| 型號： | APT1004RBN |
| 廠商： | Advanced Power Technology Ltd. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:20-16 |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | APT1004RBN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
10.67 (.420)
10.41 (.410)
5.33 (.210)
5.20 (.205)
19.05 (.750)
12.07 (.500)
10.92 (.430)
10.41 (.410)
.889 (.035) Dia. 3-Plcs.
.635 (.025)
2.54 (.100) BSC
5.08 (.200)
4.83 (.190)
3.05 (.120) BSC
1.14 (.045)
0.89 (.035)
3.81 (.150) Dia.
3.56 (.140)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
16.89 (.665)
16.38 (.645)
13.64 (.537)
13.38 (.527)
TO-257AA Package Outline
APT1004RGN
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
10,000
1,000
100
10
100
50
20
10
5
2
1
1
5
10
50 100
5001000
0
10
20
30
40
50
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
0
15
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D
= I
D
[Cont.]
TJ =+150
°
C
TJ =+25
°
C
VDS=500V
VDS=200V
VDS=100V
Crss
Ciss
Coss
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1004RKN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10050B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050B2LC | Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050JLC | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT10050LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD |
| APT1004RCN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1004RGN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RKN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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