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參數(shù)資料
| 型號： | APT1004RBN |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 0K |
| 代理商： | APT1004RBN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
TO-247AD Package Outline
050-0011
Rev
C
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
APT1004R/1004R2BN
T =+25
°C
J
T =+150
°C
10
1
60
DC
100mS
10mS
1mS
100
S
10
S
0
8
4
12
16
20
2
1
5
10
100
1,000
10,000
Ciss
oss
C
Crss
100
50
0
10
20
30
40
50
0
.5
1.0
1.5
2.0
10
30
50
040
20
V
=100V
DS
V
=200V
V
=500V
DS
1
5
10
50 100
1000
T =+25
°C
T =+150
°C
SINGLE PULSE
C
J
APT1004R/1004R2BN
OPERATION HERE
LIMITED BY R
(ON)
DS
APT1004R2BN
APT1004RBN
APT1004R2BN
APT1004RBN
I
D
= I
D
[Cont.]
.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1004RBN | 4.4 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1004R2BN | 4 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT10050B2LC | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10050LLC | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT10050B2VRG | 21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD |
| APT1004RCN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1004RGN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RKN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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