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參數(shù)資料
| 型號(hào)： | APT1004RCN |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 3.6 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | TO-254AA, 3 PIN |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | APT1004RCN |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
TO-254AA Package Outline
APT1004RCN
10S
100S
1mS
10mS
100mS
DC
10,000
1,000
100
10
100
50
20
10
5
2
1
5
10
50 100
500 1000
0
10
20
30
40
50
0
20
40
60
80
100
0
0.5
1.0
1.5
2.0
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
050-0017
Rev
B
20
10
5
1
0.5
0.1
20
16
12
8
4
0
I
D = ID [Cont.]
TJ =+150°C
TJ =+25°C
VDS=800V
VDS=500V
VDS=200V
Crss
Ciss
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1004RGN | 3.3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| APT10050JLC | 19 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10078SFLL | 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10078SFLL | 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10078BFLL | 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RDN | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1004RGN | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RKN | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT10050B2LC | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage |
| APT10050B2VFR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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