參數(shù)資料
型號(hào)： APT10057WVR
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 58K
代理商： APT10057WVR
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50 100
5001000
.01
.1
1
10
50
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
2.0
APT10057WVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
70
10
5
1
.5
.1
20
16
12
8
4
0
30,000
10,000
5,000
1,000
500
100
100
50
10
5
1
0
OPERATION HERE
LIMITED BY R
DS
(ON)
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
TJ =+150
°
C
TJ =+25
°
C
VDS=500V
VDS=200V
VDS=100V
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
Crss
Coss
Ciss
I
D
= I
D
[Cont.]
TO-267 Package Outline
5.00 (.197) BSC
1.80 (.071)
1.25 (.049)
20.45 (.805)
20.20 (.795)
4.19 (.165)
3.95 (.156)
Drain
Source
Gate
1.65 (.065)
1.40 (.055)
Dia. Typ.
3 Leads
20.32 (.800)
20.07 (.790)
19.05 (.750)
12.70 (.500)
24.15 (.951)
23.60 (.929)
10.23 (.403)
10.10 (.398)
Dimensions in Millimeters and (Inches)
4.20 (.165) BSC
7.40 (.291)
6.60 (.260)
16.90 (.665)
16.40 (.646)
相關(guān)PDF資料
PDF描述
APT10078BFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10078SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10078SFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10078BLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10086BVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT10078BFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10078BFLL_06 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10078BFLLG 功能描述:MOSFET N-CH 1000V 14A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT10078BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT10078BLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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