參數(shù)資料
型號(hào)： APT10086SVRG
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 13 A, 1000 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D3PAK-3
文件頁數(shù)： 4/4頁
文件大?。?/td> 69K
代理商： APT10086SVRG
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
5
10
50 100
500 1000
.01
.1
1
10
50
0
50
100
150
200
250
300
350
0.2
0.4
0.6
0.8
1.0
1.2
APT10086SVR
TC =+25°C
TJ =+150°C
SINGLE PULSE
60
10
5
1
.5
.1
20
16
12
8
4
0
15,000
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
050-5570
Rev
B
OPERATION HERE
LIMITED BY RDS (ON)
10
S
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
VDS=200V
VDS=100V
VDS=500V
1mS
10mS
100mS
DC
100
S
I
D
= I
D
[Cont.]
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
5,089,434
5,182,234
5,019,522
5,262,336
5,256,583
4,748,103
5,283,202
5,231,474
5,434,095
5,528,058
15.95 (.628)
16.05 (.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
Revised
4/18/95
D
3
PAK Package Outline
相關(guān)PDF資料
PDF描述
APT10086SVR 13 A, 1000 V, 0.86 ohm, N-CHANNEL, Si, POWER, MOSFET
APT10090HLL 9.3 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
APT100GF60B2R 100 A, 600 V, N-CHANNEL IGBT
APT100GF60LR 100 A, 600 V, N-CHANNEL IGBT, TO-264
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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APT10090BFLLG 功能描述:MOSFET N-CH 1000V 12A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT10090BLL 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247
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