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參數(shù)資料
| 型號： | APT100GT60LRG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 148 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 167K |
| 代理商： | APT100GT60LRG |
Symbol
Parameter
Ratings
Unit
V
CES
Collector-Emitter Voltage
600
Volts
V
GE
Gate-Emitter Voltage
±30
I
C1
Continuous Collector Current @ T
C = 25°C
148
Amps
I
C2
Continuous Collector Current @ T
C = 100°C
80
I
CM
Pulsed Collector Current 1
300
SSOA
Switching Safe Operating Area @ T
J = 150°C
300A @ 600V
P
D
Total Power Dissipation
500
Watts
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Maximum Ratings
All Ratings: T
C = 25°C unless otherwise specied.
Symbol
Characteristic / Test Conditions
Min
Typ
Max
Unit
V
(BR)CES
Collector-Emitter Breakdown Voltage (V
GE = 0V, IC = 4mA)
600
-
Volts
V
GE(TH)
Gate Threshold Voltage (V
CE = VGE, IC = 1.5mA, Tj = 25°C)
345
V
CE(ON)
Collector Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 25°C)
1.7
2.1
2.5
Collector Emitter On Voltage (V
GE = 15V, IC = 100A, Tj = 125°C)
-
2.5
-
I
CES
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 25°C)
2
--
25
μA
Collector Cut-off Current (V
CE = 600V, VGE = 0V, Tj = 125°C)
2
-
1000
I
GES
Gate-Emitter Leakage Current (V
GE = ±30V)
-
300
nA
Static Electrical Characteristics
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
.
Microsemi Website - http://www.microsemi.com
052-6297
Rev
B
6
-
2010
APT100GT60B2R(G)
APT100GT60LR(G)
600V, 100A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-
ness and ultrafast switching speed.
Features
Low Forward Voltage Drop
Low Tail Current
Integrated Gate Resistor
Low EMI, High Reliability
RoHS Compliant
RBSOA and SCSOA Rated
High Frequency Switching to 50KHz
Ultra Low Leakage Current
G
C
E
G
C
E
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