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參數(shù)資料
| 型號： | APT106N60B2C6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 106 A, 600 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | APT106N60B2C6 |
050-7208
Rev
A
6-2010
Typical Performance Curves
APT106N60B2C6
0
2000
4000
6000
8000
10000
12000
14000
0
10
20
30
40
50
0
50
00
50
00
50
0
50
100
150
200
1
10
100
200
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
50
100
150
200
250
300
350
400
0
50
100
150
200
0
2
4
6
8
10
12
14
0
100
200
300
400
0
10
100
1000
10,000
20,000
30,000
0
100
200
300
400
500
C
iss
T
J = =25°C
V
DS=480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 13, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 14 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
1000
2000
3000
4000
5000
6000
7000
8000
0
50
100
150
200
I
D (A)
FIGURE 15, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 106A
V
DD = 400V
R
G = 4.3 Ω
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 4.3Ω
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 4.3Ω
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 106A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS= 120V
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