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參數(shù)資料
| 型號： | APT10M19SVR |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | APT10M19SVR |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (
°C)
T
J
, JUNCTION TEMPERATURE (
°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (
°C)
T
C
, CASE TEMPERATURE (
°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
BV
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
APT10M19SVR
050-5506
Rev
C
0
10
20
30
40
50
0
12
345
0
2468
0
50
100
150
200
250
300
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
200
160
120
80
40
0
2.00
1.80
1.60
1.40
1.20
1.00
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
200
160
120
80
40
0
125
100
75
50
25
0
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
VDS> ID (ON) x RDS (ON)MAX.
250
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=9V, 10V & 15V
6V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
7V
5.5V
4.5V
5V
8V
6V
5.5V
4.5V
5V
8V
VGS=20V
VGS=10V
6.5V
VGS=15V
10V
6.5V
9V
7V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10M19SVR | 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10M25BNR-GULLWING | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M30BNR-BUTT | 67 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M30BNR-GULLWING | 67 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT10M25BNR-BUTT | 75 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10M19SVRG | 功能描述:MOSFET N-CH 100V 75A D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT10M25 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10M25BNFR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M25BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 75A I(D) | TO-247AD |
| APT10M25BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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