- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄362381 > APT11044JFLL Volts:1100V RDS(ON)0.44Ohms ID(cont):22Amps|FREDFETs ( fast body diode) PDF資料下載
參數(shù)資料
| 型號(hào)： | APT11044JFLL |
| 英文描述： | Volts:1100V RDS(ON)0.44Ohms ID(cont):22Amps|FREDFETs ( fast body diode) |
| 中文描述： | 電壓：1100V的的RDS（ON）0.44Ohms身份證（續(xù)）：22安培| FREDFETs（快速體二極管） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | APT11044JFLL |
INFORMATION
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
0
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
1100
10
1.20
250
1000
±100
5
3
APT1101R2
1100
10
40
±30
±40
298
2.83
-55 to 150
300
10
30
1210
G
D
S
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D
3
PAK
BFLL
SFLL
APT1101R2BFLL
APT1101R2SFLL
1100V 10A 1.200
Power MOS 7
TM
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
TM
by significantly lowering R
and Q
. Power MOS 7
TM
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D
3
PAK Package
FAST RECOVERY BODY DIODE
POWER MOS 7
TM
FREDFET
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT11044LFLL | Volts:1100V RDS(ON)0.44Ohms ID(cont):26Amps|FREDFETs ( fast body diode) |
| APT11058B2FLL | Volts:1100V RDS(ON)0.58Ohms ID(cont):20Amps|FREDFETs ( fast body diode) |
| APT11058JFLL | Volts:1100V RDS(ON)0.58Ohms ID(cont):18Amps|FREDFETs ( fast body diode) |
| APT11058LFLL | Volts:1100V RDS(ON)0.58Ohms ID(cont):20Amps|FREDFETs ( fast body diode) |
| APT11GF120BRD | Volts:1200V VF/Vce(ON):3V ID(cont):11Amps|Fast IGBT Family |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT11044LFLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1100V RDS(ON)0.44Ohms ID(cont):26Amps|FREDFETs ( fast body diode) |
| APT11058B2FLL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1100V RDS(ON)0.58Ohms ID(cont):20Amps|FREDFETs ( fast body diode) |
| APT11058JFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11058LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT11F80B | 功能描述:MOSFET N-CH 800V 12A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。