參數(shù)資料
型號: APT1204R7BLL
元件分類: JFETs
英文描述: 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 64K
代理商: APT1204R7BLL
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250A)
On State Drain Current 2 (V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance 2 (V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
050-7121
Rev
A
8-2002
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
1200
3.5
4.70
100
500
±100
35
APT1204R7
1200
3.5
14
±30
±40
135
1.08
-55 to 150
300
3.5
10
425
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D3PAK
BLL
SLL
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D3PAK Package
APT1204R7BLL
APT1204R7SLL
1200V 3.5A 4.700
POWER MOS 7
R
MOSFET
相關PDF資料
PDF描述
APT1204R7SLL 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET
APT1204R7KFLL 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT1204R7KFLLG 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT1204R7KLL 3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
APT12057B2FLLG 22 A, 1200 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET
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