- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36707 > APT20GF120SRD 32 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT20GF120SRD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 32 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 108K |
| 代理商： | APT20GF120SRD |
052-6252
Rev
C
4-2003
APT20GF120BRD/SRD
C,
CAPACITANCE
(pF)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(VOLTS)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
250Sec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25°C
f = 1MHz
9V
11V
9V
Cies
Cres
13V
7V
13V
11V
7V
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
Coes
VGE=17 & 15V
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
VGE=17 & 15V
TC=-55°C
TC=+25°C
TC=+150°C
0.1
OPERATION
LIMITED
BY
VCE (SAT)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V
Figure 4, Maximum Forward Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
50
40
30
20
10
0
100
50
10
5
1
20
16
12
8
4
0
50
40
30
20
10
0
60
40
30
20
10
0
2,000
1,000
500
100
50
10
1.0
0.5
0.1
0.05
0.01
0.005
0.001
VCE=240V
VCE=600V
0
4
8
12
16
20
0
4
8
12
16
20
0
2
4
6
8
1
5
10
50 100
1200
0.01
0.1
1.0
10
50
0
40
80
120
160
10-5
10-4
10-3
10-2
10-1
1.0
10
100s
1ms
10ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GF120SRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120BRDQ1G | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120BRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
| APT20GF120SRDQ1 | 36 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GF120SRDQ1 | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT20GF120SRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GN60B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GN60BDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT20GN60BDQ1G | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。