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參數(shù)資料
| 型號(hào)： | APT20GN60BDQ1 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 431K |
| 代理商： | APT20GN60BDQ1 |
050-7615
Rev
A
7-2005
APT20GN60BDQ1(G)
TYPICAL PERFORMANCE CURVES
BV
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
I C
,COLLECTOR
CURRENT
(A)
VOLTAGE
(NORMALIZED)
I C,
DC
COLLECTOR
CURRENT(A)
V
CE
,COLLECTOR-TO-EMITTER
VOLTAGE
(V)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(V)
I C
,COLLECTOR
CURRENT
(A)
250s PULSE
TEST<0.5 % DUTY
CYCLE
90
80
70
60
50
40
30
20
10
0
16
14
12
10
8
6
4
2
0
3.0
2.5
2.0
1.5
1.0
0.5
0
60
50
40
30
20
10
0
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
V
CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
FIGURE 2, Output Characteristics (TJ = 125°C)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 8, DC Collector Current vs Case Temperature
15V
12V
11V
10V
13V
9V
8V
T
J = 25°C.
250s PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250s PULSE TEST
<0.5 % DUTY CYCLE
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
T
J = 125°C
T
J = 25°C
T
J = -55°C
T
J = 175°C
14V
40
35
30
25
20
15
10
5
0
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
0
5
10
15
0
20
40
60
80
100
120 140
6
8
10
12
14
16
0
25
50
75
100
125
150 175
-50 -25
0
25 50 75 100 125 150 175
-50 -25
0
25 50 75 100 125 150 175
V
CE = 120V
IC = 20A
TJ = 25°C
V
CE = 300V
V
CE = 480V
I
C = 40A
I
C = 20A
I
C = 10A
I
C = 40A
I
C = 20A
I
C = 10A
VGE = 15V
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| APT20GN60SDQ2 | 40 A, 600 V, N-CHANNEL IGBT |
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| APT20GN60BDQ2 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GN60BDQ1G | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GN60BG | 功能描述:IGBT 600V 40A 136W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT20GN60K | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:High Speed PT IGBT |
| APT20GN60KG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - FIELDSTOP LOW FREQ - SIN - Rail/Tube |
| APT20GN60S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
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