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參數(shù)資料
| 型號： | APT20GN60SDQ2(G) |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, D3PAK-3 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 237K |
| 代理商： | APT20GN60SDQ2(G) |
050-7636
Rev
A
1-201
1
APT20GN60B_SDQ2(G)
1.20
1.00
0.80
0.60
0.40
0.20
0
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
2,000
1,000
500
100
50
10
70
60
50
40
30
20
10
0
C,
CAP
ACIT
ANCE
(
P
F)
I C
,COLLECT
OR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
5
10
15
20
25
30
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 4.3Ω
140
100
50
10
7
C
ies
C
oes
C
res
0.5
0.1
0.05
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
TYPICAL PERFORMANCE CURVES
相關PDF資料 |
PDF描述 |
|---|---|
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GS60KR(G) | 37 A, 600 V, N-CHANNEL IGBT |
| APT20GT60AR | 30 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| APT20GT60CR | 25 A, 600 V, N-CHANNEL IGBT, TO-254AA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GN60SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60BRDQ1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
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