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參數(shù)資料
| 型號(hào)： | APT20GN60SDQ2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 40 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 237K |
| 代理商： | APT20GN60SDQ2 |
050-7636
Rev
A
1-201
1
APT20GN60B_SDQ2(G)
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 117°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 30A
Forward Voltage
I
F = 60A
I
F = 30A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
2.0
2.4
1.7
APT20GN60B_SDQ2(G)
30
51
320
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
23
-
30
-
55
-
3
-
175
-
485
-
6
-
75
-
855
-
22
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/μs
V
R = 400V, TC = 25°C
I
F = 30A, diF/dt = -200A/μs
V
R = 400V, TC = 125°C
I
F = 30A, diF/dt = -1000A/μs
V
R = 400V, TC = 125°C
I
F = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
TYPICAL PERFORMANCE CURVES
Z
θ
JC
,
THERMAL
IMPED
ANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
D = 0.9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT20GN60BDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60BDQ2 | 40 A, 600 V, N-CHANNEL IGBT, TO-247 |
| APT20GN60SDQ2(G) | 40 A, 600 V, N-CHANNEL IGBT |
| APT20GS60BRDQ1 | 37 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT20GS60SRDQ1 | 37 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GN60SG | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60BRDQ1 | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60BRDQ1G | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMB - Rail/Tube |
| APT20GS60KR | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT20GS60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT HIGH FREQUENCY - SIN - Rail/Tube |
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