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參數(shù)資料
| 型號： | APT20GS60KR(G) |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 37 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 7/7頁 |
| 文件大?。?/td> | 605K |
| 代理商： | APT20GS60KR(G) |
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
e1 SAC: Tin, Silver, Copper
TO-220 K Package Outline
Dimensions in Inches and (Millimeters)
Collector
Emitter
Gate
Collector
APT20GS60KR(G)
052-6306
Rev
A
8-2007
相關PDF資料 |
PDF描述 |
|---|---|
| APT20GT60AR | 30 A, 600 V, N-CHANNEL IGBT, TO-204AE |
| APT20GT60CR | 25 A, 600 V, N-CHANNEL IGBT, TO-254AA |
| APT20M11JVFR | 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M120JCU2 | 20 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT20M13PVR | 120 A, 200 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT20GS60SRDQ1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GS60SRDQ1G | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT20GT60AR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT20GT60BRDQ1 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
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