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參數(shù)資料
| 型號： | APT20M120JCU2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 1200 V, 0.672 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 109K |
| 代理商： | APT20M120JCU2 |
2SK2568
Rev.3.00 Sep 07, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID*
2
12
A
Drain peak current
ID(pulse)*
1
48
A
Body to drain diode reverse drain current
IDR*
2
12
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.5
0.6
ID = 6 A, VGS = 10 V*
1
Forward transfer admittance
|yfs|
6.0
10
—
S
ID = 6 A, VDS = 10 V*
1
Input capacitance
Ciss
—
1560
—
pF
Output capacitance
Coss
—
450
—
pF
Reverse transfer capacitance
Crss
—
72
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
22
—
ns
Rise time
tr
—
78
—
ns
Turn-off delay time
td(off)
—
140
—
ns
Fall time
tf
—
60
—
ns
ID = 6 A, VGS = 10 V,
RL = 5
Body to drain diode forward voltage
VDF
—
1.1
—
V
IF = 12 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
105
—
ns
IF = 12 A, VGS = 0
diF / dt = 100 A /
s
Note:
3. Pulse Test
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