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參數(shù)資料
| 型號(hào)： | APT20M20LLLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 159K |
| 代理商： | APT20M20LLLG |
APT20M20B2LL_LLL
050-7013
Rev
D
4-2004
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
20,000
10,000
1,000
100
10
200
100
10
1
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100 200
0
10
20
30
40
50
0
20
40
60
80 100 120 140 160 180
0.3
0.5
0.7
0.9
1.1
1.3
1.5
508
100
10
1
16
12
8
4
0
10mS
1mS
100S
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
VDS=100V
VDS=40V
VDS=160V
I
D = 75A
TJ=+150°C
TJ=+25°C
Crss
Ciss
Coss
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD = 130V
R
G = 5
T
J = 125°C
L = 100H
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
V
DD = 130V
R
G = 5
T
J = 125°C
L = 100H
20
40
60
80
100
120
140
20
40
60
80
100
120
140
20
40
60
80
100
120
140
0
5
10 15 20 25 30
35 40 45 50
90
80
70
60
50
40
30
20
10
0
1400
1200
1000
800
600
400
200
0
160
140
120
100
80
60
40
20
0
2500
2000
1500
1000
500
0
V
DD = 130V
I
D = 100A
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
V
DD = 130V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
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