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參數(shù)資料
| 型號(hào)： | APT20M26WVR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 65 A, 200 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267 |
| 封裝： | TO-267, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 491K |
| 代理商： | APT20M26WVR |
10
Power MOS V MOSFET Technology...isapatentedself-
aligned interdigitated open cell structure with improved switching and R
DS(ON) advantages over our
previous MOS IV generation and over industry standard closed cell devices.
Feature
Result
Benefit
Increased packing density
Lower R
DS(ON)
Lower conduction losses
Lower temperature
Shallower diffusions
Lower Capacitances and
Faster switching speeds
gate charge
Less switching loses
Redesigned rings
Higher blocking voltages
Improved reliability
Lower leakage currents
Chip layout changes
More uniform signal
Faster switching
propagation
Avalanche Energy Rated
100% tested and guaranteed
More robust design
PowerMOS V FREDFETTechnology...hasallthe features
and benefits of the Power MOS V MOSFET with a faster recovery intrinsic body diode.
Faster reverse recovery (250ns)
-
Eliminates the need for external FRED or Schottky rectifiers
Improved ruggedness of intrinsic diode
-
Commutative dv/dt rating of >5V/ns
Soft recovery, low leakage current, lower recovery charge
Used whenever intrinsic diode is expected to carry forward current
-
Half Bridge, Full Bridge, 3-Phase Bridge topologies
Contact your local APT Representative or APT directly for information regarding the availability of
Hermetic FREDFETs.
Standard Power MOSFETs
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