參數(shù)資料
型號： APT20M36BFLL
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
中文描述： 電源MOS 7TM是一個低損耗，高電壓，N溝道增強型功率MOSFET的新一代。
文件頁數(shù)： 2/2頁
文件大小： 63K
代理商： APT20M36BFLL
ADVANCE TECHNICAL
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
INFORMATION
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Fall Time
APT20M36 BFLL - SFLL
TYP
MAX
2840
950
73
70
21
39
9
12
23
8
0
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = .615mH, R
G
=
25
W
,
Peak I
L
= 65A
APT Reserves the right to change, without notice, the specifications and information contained herein.
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
D
Drain
Source
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
TO
-
247 Package Outline
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
{3 Plcs}
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
3.81 (.150)
D
(
1.98 (.078)
Gate
Drain
Source
1.27 (.050)
11.51 (.453)
13.41 (.528)
Revised
1.04 (.041)
13.79 (.543)
4/18/95
D
3
PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D
[Cont.] @ 25°C
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
W
MIN
UNIT
pF
nC
ns
MIN
TYP
MAX
65
260
1.3
5
200
300
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
0.7
2.4
10
18
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
相關(guān)PDF資料
PDF描述
APT20M36BLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT20M36SLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT20M36SFLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
APT20M38BVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38BVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M36BFLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT20M36BFLLG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:Microsemi APT20M36BFLLG MOSFETs
APT20M36BLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT20M36BLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT20M36BLLG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
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