參數(shù)資料
型號(hào)： APT20M36SLL
元件分類： JFETs
英文描述： 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D3PAK-3
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 168K
代理商： APT20M36SLL
050-7007
Rev
C
7-2004
Typical Performance Curves
APT20M36BLL_SLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
2
4
6
8
10
0
20
40
60
80
100
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
200
160
120
80
40
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
140
120
100
80
60
40
20
0
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
6V
VGS=10V
VGS=20V
TJ = +25°C
TJ = -55°C
7V
6.5V
7.5V
9V
VGS=15V
8V
TJ = +125°C
10V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
I
D = 32.5A
V
GS = 10V
NORMALIZED TO
V
GS = 10V @ ID = 32.5A
0.0329
0.158
0.189
0.00334F
0.00802F
0.165F
Power
(watts)
Junction
temp. (
°C)
RC MODEL
Case temperature. (
°C)
相關(guān)PDF資料
PDF描述
APT20M36SLL 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
APT20M36BLLG 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M36BLL 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M38BVR 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT20M38BVR 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M36SLLG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube
APT20M38BVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38BVFR_06 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38BVFRG 功能描述:MOSFET N-CH 200V 67A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M38BVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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