參數(shù)資料
型號： APT20M36SLL
廠商： MICROSEMI POWER PRODUCTS GROUP
元件分類： JFETs
英文描述： 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： D3PAK-3
文件頁數(shù)： 5/5頁
文件大小： 168K
代理商： APT20M36SLL
050-7007
Rev
C
7-2004
Typical Performance Curves
APT20M36BLL_SLL
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain (Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
t
f
Switching Energy
90%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
Switching Energy
10%
t
d(on)
90%
5%
t
r
5%
10%
ID
D.U.T.
VDS
Figure 20, Inductive Switching Test Circuit
VDD
G
APT60DS30
相關(guān)PDF資料
PDF描述
APT20M36BLLG 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M36BLL 65 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
APT20M38BVR 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT20M38BVR 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT20M38HLL 60 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT20M36SLLG 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube
APT20M38BVFR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38BVFR_06 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT20M38BVFRG 功能描述:MOSFET N-CH 200V 67A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT20M38BVR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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