參數(shù)資料
型號(hào): APT23H50B
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 23 A, 500 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
封裝: ROHS COMPLIANT, TO-247(B), 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 263K
代理商: APT23H50B
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
inlbf
Nm
Ratings
23
14
70
±30
495
11
Min
Typ
Max
335
0.37
0.15
-55
150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ T
C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Symbol
I
D
I
DM
V
GS
E
AS
I
AR
Symbol
P
D
RθJC
RθCS
T
J,TSTG
T
L
W
T
Torque
TYPICAL APPLICATIONS
ZVS phase shifted and other full bridge
Half bridge
UPS
Welding
Solar inverters
Telecom rectiers
FEATURES
Fast switching with low EMI
Very Low trr for maximum reliability
Ultra low Crss for improved noise immunity
Low gate charge
Avalanche energy rated
RoHS compliant
TO-247
D3PAK
APT23H50B
APT23H50S
500V, 23A, 0.26 Max, trr ≤170ns
APT23H50B
APT23H50S
N-Channel Ultrafast Recovery FREDFET
Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
maximum reliability in ZVS phase shifted bridge and other circuits through much reduced
trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and
a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching
loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help
control di/dt during switching, resulting in low EMI and reliable paralleling, even when
switching at very high frequency.
Microsemi Website - http://www.microsemi.com
050-8140
Rev
A
6-2007
相關(guān)PDF資料
PDF描述
APT25GF120JCU2 45 A, 1200 V, N-CHANNEL IGBT
APT25GN120B2DQ2G 67 A, 1200 V, N-CHANNEL IGBT
APT25GN120B2DQ2 67 A, 1200 V, N-CHANNEL IGBT
APT25GN120B2DQ2 67 A, 1200 V, N-CHANNEL IGBT
APT25GN120B 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT24F50B 功能描述:MOSFET N-CH 500V 24A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT24F50B_09 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel FREDFET
APT24F50S 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 500V 24A D3PAK
APT24M120B2 功能描述:MOSFET N-CH 1200V 24A T-MAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT24M120L 功能描述:MOSFET N-CH 1200V 24A TO-264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件