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參數資料
| 型號： | APT25GN120B |
| 廠商： | MICROSEMI CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 195K |
| 代理商： | APT25GN120B |
050-7600
Rev
D
11-2005
APT25GN120B_S(G)
DYNAMIC CHARACTERISTICS
UNIT
°C/W
gm
MIN
TYP
MAX
.46
N/A
5.9
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
Symbol
RθJC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 R
G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specications and information contained herein.
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 25A
T
J = 150°C, RG = 4.3
7
, V
GE =
15V, L = 100H,V
CE = 1200V
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 25A
R
G = 1.0
7
T
J = +25°C
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 25A
R
G = 1.0
7
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN
TYP
MAX
1800
105
85
9.5
155
10
85
75
22
17
280
135
TBD
1490
2150
22
17
335
225
TBD
2390
3075
UNIT
pF
V
nC
A
ns
mJ
ns
mJ
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| APT25GN120B | 67 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP120BDF1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT25GP120BDQ1 | 69 A, 1200 V, N-CHANNEL IGBT, TO-247 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT25GN120B2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT25GN120B2DQ2G | 功能描述:IGBT 1200V 67A 272W TMAX RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GN120BG | 功能描述:IGBT 1200V 67A 272W TO247 RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| APT25GN120S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Utilizing the latest Field Stop and Trench Gate technologies |
| APT25GN120SG | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 67A 272W D3PAK 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single |
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