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參數(shù)資料
| 型號(hào)： | APT30M30B2LL |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | APT30M30B2LL |
050-7153
Rev
B
7-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
T-MAX
G
D
S
TO-264
B2LL
LLL
APT30M30B2LL
APT30M30LLL
300V 100A 0.030
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
Popular T-MAX or TO-264 Package
Power MOS 7
is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
by significantly lowering R
DS(ON)
and Q
g. Power MOS 7
combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R MOSFET
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 50A)
Zero Gate Voltage Drain Current (V
DS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current 5 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
300
0.030
100
500
±100
35
APT30M30B2LL_LLL
300
100
400
±30
±40
694
5.56
-55 to 150
300
100
50
3000
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| APT30M30B2LLG | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M30LLL | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M30LLL | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M30B2LL | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M30LLLG | 100 A, 300 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30M30B2LL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT30M30B2LLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT30M30JFLL | 功能描述:MOSFET N-CH 300V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M30JLL | 功能描述:MOSFET N-CH 300V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M30JLL_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
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