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參數(shù)資料
| 型號(hào)： | APT30M40B2VFR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | APT30M40B2VFR |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
30
60
90
120
150
0
123456
0
2468
0
40
80
120
160
200
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
APT30M40B2VFR_LVFR
I
D = 0.5 ID [Cont.]
V
GS = 10V
150
120
90
60
30
0
1.3
1.2
1.1
1.0
0.9
0.8
1.20
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
150
120
90
60
30
0
150
120
90
60
30
0
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
050-5555
Rev
C
6-2004
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
5V
4.5V
4V
VGS=6.5V, 7V, 10V & 15V
VGS=15V
VGS=10V
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +25°C
VGS=6.5V & 7V
5.5V
VGS=10V
6V
5V
4.5V
4V
5.5V
6V
VGS=20V
TJ = -55°C
NORMALIZED TO
V
GS = 10V @ 0.5 ID [Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT30M40B2VFR | 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M40LVFR | 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M40LVFR | 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT30M40B2VR | 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M40LVR | 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30M40B2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT30M40B2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT30M40B2VRG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS5 - Rail/Tube |
| APT30M40JVFR | 功能描述:MOSFET N-CH 300V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT30M40JVR | 功能描述:MOSFET N-CH 300V 70A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
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