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參數(shù)資料
| 型號： | APT30M75BFLL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 44 A, 300 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | APT30M75BFLL |
DYNAMIC CHARACTERISTICS
APT30M75 BFLL - SFLL
050-7164
Rev
A
1-2003
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -44A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -44A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -44A, di/dt = 100A/s)
Peak Recovery Current
(IS = -44A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 44A @ 25°C
VGS = 15V
VDD = 200V
ID = 44A @ 25°C
RG = 0.6
MIN
TYP
MAX
3018
771
43
57
21
23
13
3
20
2
UNIT
pF
nC
ns
MIN
TYP
MAX
44
176
1.3
8
Tj = 25°C
200
Tj = 125°C
400
Tj = 25°C
1.1
Tj = 125°C
2.7
Tj = 25°C
10
Tj = 125°C
15.1
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25, Peak IL = 44A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
44A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT30M75SFLL | 44 A, 300 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT30M75BFLL | 44 A, 300 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT30M75BFLLG | 44 A, 300 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT30M85BVR | 40 A, 300 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT30M85BVR | 40 A, 300 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT30M75BFLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT30M75BLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT30M75BLL_03 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT30M75BLLG | 制造商:Microsemi Corporation 功能描述:POWER MOSFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
| APT30M75SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
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