參數(shù)資料
型號(hào): APT30M75SLL
元件分類: JFETs
英文描述: 44 A, 300 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D3PAK-3
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 92K
代理商: APT30M75SLL
050-7155
Rev
A
1-2003
APT30M75BLL - SLL
1mS
100S
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
300
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
0.3
0.5
0.7
0.9
1.1
1.3
1.5
176
100
10
1
16
12
8
4
0
VDS=150V
VDS=60V
VDS=240V
I
D
= 44A
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
V
DD
= 200V
R
G
= 5
T
J
= 125°C
L = 100H
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
10mS
20,000
10,000
1,000
100
10
200
100
10
1
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
0
5
10
152025
30
35 404550
V
DD
= 200V
R
G
= 5
T
J
= 125°C
L = 100H
V
DD
= 200V
R
G
= 5
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
V
DD
= 200V
I
D
= 44A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
50
40
30
20
10
0
800
600
400
200
0
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
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