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參數資料
| 型號： | APT31N60BCS |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 31 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 276K |
| 代理商： | APT31N60BCS |
050-7238
Rev
A
1-2007
FINAL DATA SHEET WITH MOS 7 FORMAT
C
Power Semiconductors
O
O LMOS
TO-247
D3PAK
G
D
S
(S)
(B)
600V 31A 0.100
APT31N60BCS
APT31N60SCS
APT31N60BCSG* APT31N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultra Low RDS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Popular TO-247 or Surface Mount D3 Package
Super Junction MOSFET
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 18A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1.2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
MOSFET dv/dt Ruggedness (VDS = 480V)
Avalanche Current 2
Repetitive Avalanche Energy 2
Single Pulse Avalanche Energy 3
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
APT31N60B_SCS(G)
600
31
19
93
±30
255
2.00
-55 to 150
260
50
11
1.2
800
MIN
TYP
MAX
600
0.100
10
TBD
±100
2.1
3
3.9
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT31N60BCSG | 功能描述:MOSFET N-CH 600V 31A TO-247 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT31N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT31N60SCSG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT31N80JC3 | 功能描述:MOSFET N-CH 800V 31A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:CoolMOS™ 標準包裝:10 系列:* |
| APT3216 | 制造商:KINGBRIGHT 制造商全稱:Kingbright Corporation 功能描述:SUPER THIN SMD CHIP LED 3216(1206) |
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