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參數(shù)資料
| 型號： | APT34N80B2C3 |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 800 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 178K |
| 代理商： | APT34N80B2C3 |
T-MAX
TO-264
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
050-7147
Rev
E
6-2004
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
Ultra low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
Popular T-MAX or TO-264 Package
APT34N80B2C3
APT34N80LC3
800V
34A 0.145
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 22A)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800V, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS = 640V, ID = 34A, TJ = 125°C)
Repetitive Avalanche Current 7
Repetitive Avalanche Energy 7
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
800
0.125
0.145
1.0
50
500
±200
2.10
3
3.9
APT34N80B2C3_LC3
800
34
102
±20
±30
417
3.33
-55 to 150
300
50
17
0.5
670
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT34N80B2C3G | 功能描述:MOSFET N-CH 800V 34A T-MAX RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT34N80LC3 | 制造商:APT 功能描述:MOSFET |
| APT34N80LC3G | 功能描述:MOSFET N-CH 800V 34A TO-264 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT3507DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 60A I(D) | CHIP |
| APT3507FN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 60A I(D) | F-PACK SIP |
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