- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36712 > APT35GN120B 94 A, 1200 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號(hào)： | APT35GN120B |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 94 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | APT35GN120B |
050-7601
Rev
C
10-2005
APT35GN120B(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 2.2
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
VGE = +15V
RG = 2.2
R
G = 2.2, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C, TJ =125°C
R
G = 2.2
L = 100 H
30
25
20
15
10
5
0
80
70
60
50
40
30
20
10
0
12000
10000
8000
6000
4000
2000
0
25000
20000
15000
10000
5000
0
V
GE = 15V
T
J = 25°C, VGE = 15V
VCE = 800V
VGE = +15V
RG = 2.2
VCE = 800V
VGE = +15V
RG = 2.2
E
on2,70A
E
off,70A
E
off,35A
E
on2,35A
E
on2,17.5A
E
off,17.5A
E
on2,70A
E
off,70A
E
on2,35A
E
off,35A
E
on2,17.5A
E
off,17.5A
VCE = 800V
VGE = +15V
TJ = 125°C
R
G = 2.2, L = 100H, VCE = 800V
450
350
300
250
200
150
100
50
0
150
125
100
75
50
25
0
8000
7000
6000
5000
4000
3000
2000
1000
0
12000
10000
8000
6000
4000
2000
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25°C,VGE =15V
T
J = 125°C,VGE =15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
0
10
20
30
40
50
0
25
50
75
100
125
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT35GN120BG | 94 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT35GN120L2DQ2 | 94 A, 1200 V, N-CHANNEL IGBT |
| APT35GN120L2DQ2G | 94 A, 1200 V, N-CHANNEL IGBT |
| APT35GN120L2DQ2 | 94 A, 1200 V, N-CHANNEL IGBT |
| APT35GP120B2DF2 | 96 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT35GN120BG | 功能描述:IGBT 1200V 94A 379W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT35GN120L2DQ2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:IGBT |
| APT35GN120L2DQ2G | 功能描述:IGBT 1200V 94A 379W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT35GN120S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Utilizing the latest Non-Punch Through (NPT) Field Stop technology |
| APT35GN120SG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Utilizing the latest Non-Punch Through (NPT) Field Stop technology |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。