參數(shù)資料
型號: APT35GP120B2DF2
元件分類: IGBT 晶體管
英文描述: 96 A, 1200 V, N-CHANNEL IGBT
封裝: B2, TMAX-3
文件頁數(shù): 7/9頁
文件大?。?/td> 199K
代理商: APT35GP120B2DF2
050-7407
Rev
E
8-2004
APT35GP120B2DF2
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C = 94°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J = 45°C, 8.3ms)
Symbol
I
F(AV)
I
F(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F = 35A
Forward Voltage
I
F = 70A
I
F = 35A, TJ = 125°C
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
3.37
4.24
2.28
APT35GP120B2DF2
30
46
210
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
37
-
300
-
370
-4
-
430
-
2025
-9
-
170
-
2970
-31
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F = 30A, diF/dt = -200A/s
V
R = 800V, TC = 25°C
I
F = 30A, diF/dt = -200A/s
V
R = 800V, TC = 125°C
I
F = 30A, diF/dt = -1000A/s
V
R = 800V, TC = 125°C
I
F = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25°C
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
0.0442
°C/W
0.242
°C/W
0.324
°C/W
0.00222 J/
°C
0.00586 J/
°C
0.0596 J/
°C
Power
(watts)
Junction
temp(
°C)
RC MODEL
Case temperature(
°C)
相關(guān)PDF資料
PDF描述
APT35GP120B2DQ2 96 A, 1200 V, N-CHANNEL IGBT
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