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參數(shù)資料
| 型號： | APT4012BVFR |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 74K |
| 代理商： | APT4012BVFR |
DYNAMIC CHARACTERISTICS
APT4012BVFR_SVFR
050-7271
Rev
B
1-2006
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.4
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -37A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -37A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -37A, di/dt = 100A/s)
Peak Recovery Current
(IS = -37A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
t r
td(off)
t f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 37A @ 25°C
VGS = 15V
VDD = 200V
ID = 37A @ 25°C
RG = 1.6
MIN
TYP
MAX
4500
690
290
195
25
90
14
17
55
12
UNIT
pF
nC
ns
MIN
TYP
MAX
37
148
1.3
15
Tj = 25°C
250
Tj = 125°C
525
Tj = 25°C
1.6
Tj = 125°C
6.0
Tj = 25°C
13
Tj = 125°C
21
THERMAL CHARACTERISTICS
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.34
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 1.90mH, RG = 25, Peak IL = 37A
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
5dv/
dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
[Cont.]
di/
dt ≤ 700A/s
V
R ≤
V
DSS
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT4012BVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT4012SVFR | 37 A, 400 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4014SVFR | 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT4014BVFR | 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT4014SVFR | 28 A, 400 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT4012BVFRG | 功能描述:MOSFET N-CH 400V 37A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT4012BVR | 制造商:Microsemi Corporation 功能描述: |
| APT4012SVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT4012SVFRG | 功能描述:MOSFET N-CH 400V 37A D3PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT4014BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
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