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參數(shù)資料
| 型號： | APT4025BN |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 400 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | APT4025BN |
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
GS = 0V, ID = 250 A)
On State Drain Current 2
(V
DS > ID(ON) x RDS(ON) Max, VGS = 10V)
Drain-Source On-State Resistance 2
(V
GS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
Symbol
R
θJC
R
θJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
0.40
40
UNIT
°C/W
Symbol
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
MIN
TYP
MAX
APT4020BN
400
APT4025BN
400
APT4020BN
26
APT4025BN
23
APT4020BN
0.20
APT4025BN
0.25
250
1000
±100
24
UNIT
Volts
Amps
Ohms
A
nA
Volts
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
APT
4020BN
4025BN
400
26
23
104
92
±30
310
2.48
-55 to 150
300
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT4020BN 400V 26.0A 0.20
APT4025BN 400V 23.0A 0.25
N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV
050-4007
Rev
B
TO-247
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bt B4 Parc Cadéra Nord
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
G
D
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT4020BN | 26 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT40GP60B2DQ2 | 100 A, 600 V, N-CHANNEL IGBT |
| APT40GP60B2DQ2G | 100 A, 600 V, N-CHANNEL IGBT |
| APT40GP60B2DQ2G | 100 A, 600 V, N-CHANNEL IGBT |
| APT40GP60B2DQ2 | 100 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT4025BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 23A I(D) | TO-247AD |
| APT4025HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 21A I(D) | TO-258ISO |
| APT4030 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT4030AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 17A I(D) | TO-3 |
| APT4030BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 18.5A I(D) | TO-247AD |
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