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參數(shù)資料
| 型號： | APT4030CNR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | ? -通道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | APT4030CNR |
C
I
D
I
D
V
G
Q
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
g
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.07 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
VDS=80V
VDS=200V
VDS=320V
0
.5 1.0 1.5
2.0
0
10
20
30
40
50
TO-254AA Package Outline
I
D
= I
D
[Cont.]
1
5
10
50 100
400
APT4030CNR
0
20
40
60
80
100
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
1
μ
S
10
μ
S
100
μ
S
1mS
10mS
60
10
5
1
0.5
.1
10,000
1,000
100
10
100
50
20
10
5
2
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY R
DS
(ON)
Crss
Coss
Ciss
TJ = +150
°
C
TJ = +25
°
C
0
DC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT4030DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP |
| APT4040AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14.5A I(D) | TO-3 |
| APT4040BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) | TO-247AD |
| APT4040BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 16A I(D) | TO-247AD |
| APT4040CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 13A I(D) | TO-254ISO |
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