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參數(shù)資料
| 型號(hào)： | APT40GU60JU3 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 86 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 522K |
| 代理商： | APT40GU60JU3 |
APT40GU60JU3
A
PT
40G
U
60J
U
3–
R
ev
0
A
pr
il,
2004
APT website – http://www.advancedpower.com
3- 9
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
VR = 600V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
44
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
23
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
4
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
8
A
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
700
nC
trr
Reverse Recovery Time
70
ns
Qrr
Reverse Recovery Charge
1300
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/s
Tj = 125°C
30
A
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.44
RthJC
Junction to Case
Diode
1.21
RthJA
Junction to Ambient (IGBT & Diode)
20
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ,TSTG Storage Temperature Range
-55
150
TL
Max Lead Temp for Soldering:0.063” from case for 10 sec
300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5
N.m
Wt
Package Weight
29.2
g
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