- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄36714 > APT5010B2LL (MICROSEMI POWER PRODUCTS GROUP) 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | APT5010B2LL |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 174K |
| 代理商： | APT5010B2LL |
050-7011
Rev
D
9-2004
DYNAMIC CHARACTERISTICS
APT5010B2LL_LLL
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -46A)
Reverse Recovery Time (I
S = -46A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -46A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
46
184
1.3
608
11.0
8
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.25
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 250V
I
D = 46A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 250V
I
D = 46A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 333V, VGS = 15V
I
D = 46A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 333V, VGS = 15V
I
D = 46A, RG = 5
MIN
TYP
MAX
4360
895
60
95
24
50
11
15
25
3
545
510
845
595
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.51mH, RG = 25, Peak IL = 46A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID46A
di/dt ≤ 700A/s V
R ≤ VDSS
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT5010LVFRG | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5010LVFR | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5010LVFR | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT5012JNU2 | 43 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5012JNU3 | 43 A, 1000 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5010B2LL_04 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:POWER MOS 7 MOSFET |
| APT5010B2LLG | 功能描述:MOSFET N-CH 500V 46A T-MAX RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5010B2VFR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT5010B2VFRG | 功能描述:MOSFET N-CH 500V 47A T-MAX RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT5010B2VR | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。