參數資料
型號： APT5010JLC
廠商： Advanced Power Technology Ltd.
英文描述： Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
中文描述： 電源MOS VITM是一種低柵極電荷新一代高壓N溝道增強型功率MOSFET。
文件頁數： 2/2頁
文件大小： 63K
代理商： APT5010JLC
0
15.49 (.610)
5.38 (.212)
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
Gate
1.01 (.040)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
Drain
Source
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
D
19.51 (.768)
19.81 (.780)
25.48 (1.003)
2.29 (.090)
0.762.79 (.110)
3.18 (.125)
3.10 (.122)
4.60 (.181)
1.80 (.071)
2.59 (.102)
0.48 (.019)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
D
2.29 (.090)
5.79 (.228)
5.45 (.215) BSC
2-Plcs.
T-MAX
TM
(B2) Package Outline
TO-264 (L) Package Outline
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
ADVANCE TECHNICAL
Reverse Recovery Time
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
INFORMATION
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Fall Time
APT5010 B2FLL - LFLL
TYP
MAX
4105
824
47
92
22
40
12
9
30
5
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 1.70mH, R
G
=
25
W
,
Peak I
L
= 46A
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Charge
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -I
D
[Cont.],
di
/
dt
= 100A/μs)
Symbol
I
S
I
SM
V
SD
dv
/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D
[Cont.] @ 25°C
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
R
G
= 0.6
W
MIN
UNIT
pF
nC
ns
MIN
TYP
MAX
46
184
1.3
5
250
500
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
1.6
5.5
15
27
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.25
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
相關PDF資料
PDF描述
APT5010JLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
APT5010JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT5010JVR ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
APT5010LLC Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
APT5010JVRU2 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
相關代理商/技術參數
參數描述
APT5010JLL 功能描述:MOSFET N-CH 500V 41A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:*
APT5010JLL_04 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 MOSFET
APT5010JLLU2 功能描述:MOSFET N-CH 500V 41A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APT5010JLLU3 功能描述:POWER MOD MOSFET 500V 41A SOT227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:*
APT5010JN 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 48A 4-Pin SOT-227
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