參數(shù)資料
型號: APT5010JLL
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ISOTOP-4
文件頁數(shù): 4/5頁
文件大小: 175K
代理商: APT5010JLL
APTC60VDAM24T3G
APT
C
60VDAM
24T
3G
Rev
0
Septem
ber
,2009
www.microsemi.com
4 – 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
e
rm
a
lImpe
da
nc
e
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
80
160
240
320
400
480
560
640
720
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=25°C
TJ=125°C
0
40
80
120
160
200
240
280
01
2
3
45
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
0
40
80
120 160 200 240 280
ID, Drain Current (A)
R
DS
(o
n
)Drai
n
to
S
o
urce
ON
R
esi
stan
ce
Normalized to
VGS=10V @ 95A
0
20
40
60
80
100
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Drain
Cu
rren
t(A)
DC Drain Current vs Case Temperature
相關PDF資料
PDF描述
APT5010JLL 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT5010JVFR 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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APT5010JVR 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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