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參數(shù)資料
| 型號(hào)： | APT5010JLL |
| 元件分類： | JFETs |
| 英文描述： | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 175K |
| 代理商： | APT5010JLL |
APTC60VDAM24T3G
APT
C
60VDAM
24T
3G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
350
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
600
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 47.5A
24
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14.4
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
17
nF
Qg
Total gate Charge
300
Qgs
Gate – Source Charge
68
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A
102
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
45
ns
Eon
Turn-on Switching Energy
1350
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1040
J
Eon
Turn-on Switching Energy
2200
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1270
J
Chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
100
A
IF = 100A
1.6
2
IF = 200A
2
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.3
V
Tj = 25°C
160
trr
Reverse Recovery Time
Tj = 125°C
220
ns
Tj = 25°C
290
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt=200A/s
Tj = 125°C
1530
nC
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