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參數(shù)資料
APT5010JLLU2
A
PT
5010J
L
U
2–
R
ev
0
A
pr
il
,2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 23A
100
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4360
Coss
Output Capacitance
894
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
60
pF
Qg
Total gate Charge
96
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 41A @ TJ=25°C
49
nC
Td(on)
Turn-on Delay Time
11
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
25
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 250V
ID = 41A @ TJ=25°C
RG = 0.6
W
3
ns
Eon
Turn-on Switching Energy
u
543
Eoff
Turn-off Switching Energy
Inductive Switching @ 25°C
Vbus = 330V, VGS=15V
ID=46A, RG=5
509
J
Eon
Turn-on Switching Energy
u
843
Eoff
Turn-off Switching Energy
Inductive Switching @ 125°C
Vbus = 330V, VGS=15V
ID=46A, RG=5
593
J
u Eon includes diode reverse recovery
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF = 30A
1.6
1.8
IF = 60A
1.9
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.4
V
VR = 600V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR = 600V
Tj = 125°C
500
A
CT
Junction Capacitance
VR = 200V
44
pF
Reverse Recovery Time
IF=1A,VR=30V
di/dt =100A/s
Tj = 25°C
23
Tj = 25°C
85
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
4
IRRM
Maximum Reverse Recovery Current
Tj = 125°C
8
A
Tj = 25°C
130
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
700
nC
trr
Reverse Recovery Time
70
ns
Qrr
Reverse Recovery Charge
1300
nC
IRRM
Maximum Reverse Recovery Current
IF = 30A
VR = 400V
di/dt =1000A/s
Tj = 125°C
30
A
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| APT5010JVRU2 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
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