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參數(shù)資料
| 型號： | APT5010JLLU3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | ISOTOP Buck chopper MOSFET Power Module |
| 中文描述： | 1000V的集電極降壓斬波器MOSFET的功率模塊 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 477K |
| 代理商： | APT5010JLLU3 |
APT5010JLLU3
A
APT website – http://www.advancedpower.com
2 – 7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
Test Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V,V
DS
= 500V
V
GS
= 0V,V
DS
= 400V
V
GS
= 10V, I
D
= 23A
V
GS
= V
DS
, I
D
= 2.5mA
V
GS
= ±20
V, V
DS
= 0V
Min
500
3
Typ
Max
100
500
100
5
±100
Unit
V
T
j
= 25°C
T
j
= 125°C
I
DSS
Zero Gate Voltage Drain Current
μA
R
DS(on)
V
GS(th)
I
GSS
Dynamic Characteristics
Symbol Characteristic
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
gs
Gate – Source Charge
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
m
V
nA
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
Min
Typ
4360
894
60
96
Max
Unit
pF
24
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 41A @ T
J
=25°C
49
nC
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Eon includes diode reverse recovery
Diode ratings and characteristics
Symbol Characteristic
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
11
15
25
3
Resistive switching @ 25°C
V
GS
= 15V
V
Bus
= 250V
I
D
= 41A @ T
J
=25°C
R
G
= 0.6
Inductive Switching @ 25°C
V
bus
= 330V, V
GS
=15V
I
D
=46A, R
G
=5
Inductive Switching @ 125°C
V
bus
= 330V, V
GS
=15V
I
D
=46A, R
G
=5
ns
Turn-on Switching Energy
543
Turn-off Switching Energy
509
μJ
Turn-on Switching Energy
843
Turn-off Switching Energy
593
μJ
Test Conditions
I
F
= 30A
I
F
= 60A
I
F
= 30A
V
R
= 600V
V
R
= 600V
V
R
= 200V
I
F
=1A,V
R
=30V
di/dt =100A/μs
Min
Typ
1.6
1.9
1.4
44
Max
1.8
250
500
Unit
V
F
Diode Forward Voltage
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
I
RM
Maximum Reverse Leakage Current
μA
C
T
Junction Capacitance
pF
Reverse Recovery Time
T
j
= 25°C
23
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
85
160
4
8
130
700
70
1300
30
t
rr
Reverse Recovery Time
ns
I
RRM
Maximum Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
I
F
= 30A
V
R
= 400V
di/dt =200A/μs
nC
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
ns
nC
A
I
F
= 30A
V
R
= 400V
di/dt =1000A/μs
T
j
= 125°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| APT5010JN | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 48A 4-Pin SOT-227 |
| APT5010JVFR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010JVR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010JVRU2 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010JVRU3 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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