- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄36714 > APT5010JN 48 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT5010JN |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | APT5010JN |
MIN
TYP
MAX
APT5010JN
48
APT5012JN
43
APT5010JN
192
APT5012JN
172
1.8
415
830
8.3
16
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
R
G
= 0.6
MIN
TYP
MAX
5570
6500
1170
1640
440
660
240
370
32
48
116
170
15
30
25
50
48
75
12
25
UNIT
pF
nC
ns
APT5010/5012JN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current 1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
C
Characteristic / Test Conditions
Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
UNIT
nH
Volts
pF
in-lbs
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
MIN
TYP
MAX
3
5
2500
35
13
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
050-5037
Rev
F
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.3
0.1
0.05
0.01
0.005
0.001
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT5013JNF | 42 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5011JNF | 46 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5014B2VR | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5014B2VRG | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5014B2VR | 37 A, 500 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT5010JVFR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010JVR | 功能描述:MOSFET N-CH 500V 44A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010JVRU2 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010JVRU3 | 功能描述:MOSFET N-CH 500V 44A SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT5010LFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。